Triple Junction Gallium Arsenide Solar wafer Gaas Thin Film Solar Cell

4.10Gallium arsenide photoconductive sensor.A gallium arsenide GaAs photoconductive sensor is made as a small,rectangular chip 2 mm long, l mm wide and 0.1 mm thick (see Figure 4.4a for the construction). A red light of intensity 10 mW/cm2 and wavelength 680 nm is incident perpendicularly on the top sur- face.The semiconductor is n-type with an electron concentration of 1.1 1019 electrons/m.The mobilities of electrons and holes in GaAs are 8400 cm/Vs and 400 cm/V-s,respectively.Assuming all inc

New manufacturing process could yield better solar cells, faster chips