Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new ...

Mitsubishi announced that it has begun shipping samples of two S1-Series high-voltage IGBT modules rated at 1.7 kV.

The researchers explained that insulated-gate bipolar transistors (IGBTs), which are the switching devices in the PV inverter, are extremely sensitive to high temperatures and, without proper ...

For motor control applications where enhanced controllability of dv/dt is important, the IGBT 7 devices are designed to offer ...

Equipped with an eighth-generation insulated gate bipolar transistor (IGBT), the module minimizes power loss and maximizes output power of inverters and other components in power systems ...

The company explained that a utility-scale inverter powered by an insulated gate bipolar transistor (IGBT) switches between 1 kHz and 3 kHz, which requires the actual gate drive to contain up to 1 ...

Vietnam Insulated Gate Bipolar Transistors And Metal Oxide Field Effect Transistor Market Key Takeaways: The Vietnam Insulated Gate Bipolar Transistors (IGBT) and Metal Oxide Field Effect Transistor ...

The devices integrate high-performance IGBTs with other essential power components to simplify designs and provide efficient, cost-effective solutions for power applications in solar inverters ...

and inverter stages for AC/DC conversion in UPS systems. The VOFD341A and VOFD343A are particularly suited for driving IGBTs ...